sot23 silicon planar low leakage common cathode diode pair issue 2 ? september 1995 j part marking detail ? d58 absolute maximum ratings. parameter symbol value unit repetitive peak reverse voltage v rrm 100 v average rectified forward current i f(av) 250 ma non-repetitive peak forward current (t=1 m s) i fsm 3.0 a power dissipation at t amb = 25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. reverse current i r 3 5 na m a v rrm =50v v rrm =100v, t amb =150c reverse recovery time* t rr 400 ns i f = i r =50 ? 400ma forward recovery time t fr 10 ns i f =10ma diode capacitance c d 4pfv r =1v, f=1mhz forward overshoot voltage v fr typ 0.9 v i f =10ma, rise time=5ns 20% forward voltage v f 1.4 v i f =-200ma *time for i r to recover to 10% of i r peak for typical characteristics graphs see flld263 datasheet. sot23 FLLD258 1 23 1 3 2 3 - 96
sot23 silicon planar low leakage common anode diode pair issue 2 ? january 1996 j part marking detail ? d63 absolute maximum ratings. parameter symbol value unit repetitive peak reverse voltage v rrm 100 v average rectified forward current i f(av) 250 ma non-repetitive peak forward current (t=1 m s) i fsm 3.0 a power dissipation at t amb = 25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. reverse current i r 5 5 na m a v rrm =100v v rrm =100v, t amb =150c reverse recovery time* t rr 400 ns i f = i r =50 ? 400ma forward recovery time t fr 10 ns i f =10ma diode capacitance c d 4pfv r =1v, f=1mhz forward overshoot voltage v fr typ 0.9 v i f =10ma, rise time=5ns 20% forward voltage v f 1.4 v i f =-200ma *time for i r to recover to 10% of i r peak sot23 flld263 diode pin connection 1 23 1 3 2 FLLD258 flld261 flld263 3 - 98 3 - 99 0100 v f - forward voltage (v) i r v v f 0 25 80 60 40 20 5 10 15 20 typical characteristics
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